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CY670A-ET
Cryogenic Temperature Sensors - Silicon Diodes
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Product Specs
<< See all Product Models| Brand |
 |
| Accuracy Band Availability | 1, 2, 3, 4 |
| Band Type | Band A |
| Current, Max Note | 1 mA, continuous or 100 mA, pulsed |
| GrossWeightValue | 0.08 |
| Mounting | Screw in |
| Number of Wires | 2 |
| Output Signal | Voltage |
| Process Temperature, Max | 226.85 °C |
| Process Temperature, Min | -271.8 °C |
| Recommended Excitation | 10 µA, ± 0.1% |
| Repeatability | ± 10 mK @ 4.2 K |
| Reverse Voltage | 60 V |
| Sensor Height | 5.556 mm |
| Sensor Threads | 6-32 |
| Sensor Width | 6.096 mm |
| Series ID | CY670 |
| Supply Power Effects | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K |
| Temperature Sensor Type | Silicon Diode |
| Thermal Response Time | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K |
| Use in Magnetic Field Note | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K |
| Use in Radiation Note | Recommended for use only in low level radiation |
| Wire Diameter | 0.38 mm |
| Wire Length | 19.304 mm |
| Country of Origin | United States |
| See All Specs | |
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